vishay siliconix dg2711 document number: 73200 s10-2403-rev. c, 25-oct-10 www.vishay.com 1 low-voltage, sub-ohm, spdt analog switch features ? low voltage operation (1.6 v to 3.6 v) ? low on-resistance - r ds(on) : 0.44 ? typ. ? fast switching - t on : 25 ns, t off : 14 ns ? low leakage ? ttl/cmos compatible ? 6-pin sc-70 package ? compliant to rohs directive 2002/95/ec benefits ? reduced power consumption ? simple logic interface ? high accuracy ? reduce board space applications ? cellular phones ? communication systems ? portable test equipment ? battery operated systems ? sample and hold circuits description the dg2711 is a sub-ohm single-pole/double-throw monolithic cmos analog switch designed for high performance switching of analog signals. combining low power, high speed (t on : 25 ns, t off : 14 ns), low on-resistance (r ds(on) : 0.44 ? ) and small physical size (sc70), the dg2711 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. the dg2711 is built on vishay siliconix?s low voltage submicron cmos process. an epitaxial layer prevents latchup. break-before-make is guaranteed for dg2711. each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. as a committed partner to the community and the environment, vishay siliconix manufactures this product with the lead (pb)-free device terminations. for analog switching products manufactured with 100 % matte tin device terminations, the lead (pb)-free "-e3" suffix is being used as a designator. functional block diagram and pin configuration no (source 1 ) com nc (source 2 ) 1 2 3 6 5 top view in v+ gnd 4 sc-70 device marking: e9xx truth table logic nc no 0 on off 1offon ordering information temp. range package part number - 40 to 85 c sc70-6 dg2711dl-t1-e3
www.vishay.com 2 document number: 73200 s10-2403-rev. c, 25-oct-10 vishay siliconix dg2711 notes: a. signals on nc, no, or com or in exceeding v+ will be clamped by inte rnal diodes. limit forward diode current to maximum curr ent ratings. b. all leads welded or soldered to pc board. c. derate 3.1 mw/c above 70 c. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. absolute maximum ratings parameter limit unit reference v+ to gnd - 0.3 to + 4 v in, com, nc, no a - 0.3 to (v+ + 0.3) continuous current (no, nc and com pins) 200 ma peak current (pulsed at 1 ms, 10 % duty cycle) 300 storage temperature (d suffix) - 65 to 150 c power dissipation (packages) b 6-pin so70 c 250 mw specifications (v+ = 1.8 v) parameter symbol test conditions otherwise unless specified v+ = 1.8 v, 10 %, v in = 0.4 v or 1.0 v e temp. a limits - 40 c to 85 c unit min. b typ. c max. b analog switch analog signal range d v no , v nc , v com full 0 v+ v on-resistance r on v+ = 1.8 v, v com = 0.9 v i no , i nc = 100 ma room full 0.8 2.0 2.5 ? switch off leakage current f i no(off) i nc(off) v+ = 2.2 v, v no , v nc = 0.2 v/2 v, v com = 2 v/0.2 v room full d - 1 - 10 1 10 na i com(off) room full d - 1 - 10 1 10 channel-on leakage current f i com(on) v+ = 2.2 v, v no , v nc = v com = 0.2 v/2 v room full d - 1 - 10 1 10 digital control input high voltage v inh full 1.0 v input low voltage v inl full 0.4 input capacitance d c in full 5 pf input current f i inl or i inh v in = 0 or v+ full - 1 1 a dynamic characteristics tu r n - o n t i m e d t on v no or v nc = 1.5 v, r l = 300 ? , c l = 35 pf figures1 and 2 room full d 36 60 62 ns turn-off time d t off room full 22 42 44 break-before-make time d t d room 3 charge injection d q inj c l = 1 nf, v gen = 0 v, r gen = 0 ??? figure 3 room 20 pc off-isolation d oirr r l = 50 ?? , c l = 5 pf, f = 1 mhz room - 56 db crosstalk d x ta l k room - 56 no, nc off capacitance d c no(off) c nc(off) v in = 0 or v+, f = 1 mhz room 73 pf channel-on capacitance d c on room 167
document number: 73200 s10-2403-rev. c, 25-oct-10 www.vishay.com 3 vishay siliconix dg2711 notes: a. room = 25 c, full = as de termined by the operating suffix. b. the algebraic convention whereby the most negative value is a minimum and the most pos itive a maximum, is used in this data sheet. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. guarantee by design, nor subjected to production test. e. v in = input voltage to perform proper function. f. guaranteed by 3 v leakage testing, not production tested. specifications (v+ = 3.0 v) parameter symbol test conditions otherwise unless specified v+ = 3 v, 10 %,v in = 0.5 v or 1.4 v e temp. a limits - 40 c to 85 c unit min. b typ. c max. b analog switch analog signal range d v no , v nc , v com full 0 v+ v on-resistance r on v+ = 2.7 v, v com = 1.5 v i no , i nc = 100 ma room full 0.44 0.6 0.7 ? r on flatness r on flatness v+ = 2.7 v, v com = 0.6 v, 1.5 v i no , i nc = 100 ma room 0.14 0.2 r on match ? r on v+ = 2.7 v, v com = 1.5 v i no , i nc = 100 ma room 0.07 switch off leakage current i no(off) i nc(off) v+ = 3.3 v, v no , v nc = 0.3 v/3 v, v com = 3 v/0.3 v room full - 1 - 10 1 10 na i com(off) room full - 1 - 10 1 10 channel-on leakage current i com(on) v+ = 3.3 v, v no , v nc = v com = 0.3 v/3 v room full - 1 - 10 1 10 digital control input high voltage v inh full 1.4 v input low voltage v inl full 0.5 input capacitance d c in full 5 pf input current f i inl or i inh v in = 0 or v+ full - 1 1 a dynamic characteristics tu r n - o n t i m e t on v no or v nc = 1.5 v, r l = 300 ? , c l = 35 pf figures 1 and 2 room full 25 46 48 ns turn-off time t off room full 14 38 40 break-before-make time t d room 1 charge injection d q inj c l = 1 nf, v gen = 0 v, r gen = 0 ? , figure 3 room 28 pc off-isolation d oirr r l = 50 ?? , c l = 5 pf, f = 1 mhz room - 56 db crosstalk d x ta l k room - 56 no, nc off capacitance d c no(off) c nc(off) v in = 0 or v+, f = 1 mhz room 70 pf channel-on capacitance d c on room 163 power supply power supply range v+ 1.6 3.6 v power supply current i+ v+ = 3.6 v, v in = 0 or v+ 0.01 1.0 a
www.vishay.com 4 document number: 73200 s10-2403-rev. c, 25-oct-10 vishay siliconix dg2711 typical characteristics (25 c, unless otherwise noted) r on vs. v com and single supply voltage supply current vs. temperature leakage current vs. temperature - on-resistance ( ) r on 0 0.25 0.50 0.75 1.00 1.25 1.50 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v com - analog voltage (v) t = 25 c i s = 100 ma ?? v+ = 1.6 v ?? v+ = 1.8 v ?? v+ = 2.0 v ?? v+ = 2.5 v ?? v+ = 2.7 v ?? v+ = 3.0 v ?? v+ = 3.3 v ?? v+ = 3.6 v - 60 - 40 - 20 0 20 40 60 80 100 10 000 1000 1 temperature (c) i+ - supply current (na) 10 v+ = 3 v v in = 0 v 100 - 60 - 40 - 20 0 20 40 60 80 100 100 0.1 10 leakage current (pa) temperature (c) 1000 v+ = 3.3 v i no(off) /i nc(off) i com(on) i com(off) 1 r on vs. analog voltage and temperature supply current vs. input switching frequency leakage vs. analog voltage 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.5 1.0 1.5 2.0 2.5 3.0 - on-resistance ( ) r on v com - analog voltage (v) v+ = 3.0 v i s = 100 ma 85 c - 40 c 25 c 100 m input switching frequency (hz) 10 k 1 m 10 m 100 k 1 k 100 10 i+ - supply current (a) 1 m 100 10 1 10 n 100 n v+ = 3 v 1 n 10 m - 300 - 250 - 200 - 150 - 100 - 50 0 50 100 150 200 250 300 0.00 0.55 1.10 1.65 2.20 2.75 3.30 v com , v no , v nc - analog voltage leakage current (pa) v+ = 3.3 v ?? i com(off) ?? i no(off) /i nc(off) ?? i com(on)
document number: 73200 s10-2403-rev. c, 25-oct-10 www.vishay.com 5 vishay siliconix dg2711 typical characteristics (25 c, unless otherwise noted) switching time vs. temperature switching threshold vs. supply voltage 0 5 10 15 20 25 30 35 40 60 - 40 - 20 0 20 40 60 80 100 t on v+ = 1.8 v temperature (c) t on , t off - switching time (ns) t on v+ = 3.0 v t off v+ = 2.0 v t off v+ = 3.0 v t on v+ = 2.0 v t off v+ = 1.8 v - 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v+ - supply voltage (v) v t - switching threshold (v) insertion loss, off-isolation, crosstalk vs. frequency charge injection vs. analog voltage -90 -20 10 loss, oirr, x frequency (hz) -10 0 10 m 1 g 100 m 1 m 100 k -30 -40 -50 -60 -70 -80 talk (db) v+ = 3 v r l = 50 loss oirr x ta l k 0 20 40 60 80 100 120 140 160 180 200 220 240 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v com - analog voltage (v) q - charge injection (pc) v+ = 1.8 v v+ = 3 v
www.vishay.com 6 document number: 73200 s10-2403-rev. c, 25-oct-10 vishay siliconix dg2711 test circuits figure 1. switching time switch input c l (includes fixture and stray capacitance) v+ in no or nc c l 35 pf com logic input r l 50 v out gnd v+ 50 % 0 v logic input switch output t on t off logic "1" = switch on logic input waveforms inverted for switches that have the opposite logic sense. switch output v out =v com r l r l +r on 0.9 x v out t r < 5 ns t f < 5 ns v inh v inl figure 2. break-before-make interval c l (includes fixture and stray capacitance) nc v no no v nc 0 v logic input switch output v o v nc = v no t r < 5 ns t f < 5 ns 90 % t d t d in com v+ gnd v+ c l 35 pf v o r l 50 v inh v inl figure 3. charge injection off on on in v out v out q = v out x c l c l = 1 nf com r gen v out nc or no v in = 0 - v+ in v gen gnd v+ v+ in depends on switch configuration: input polarity determined by sense of switch. +
document number: 73200 s10-2403-rev. c, 25-oct-10 www.vishay.com 7 vishay siliconix dg2711 test circuits vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73200 . figure 4. off-isolation in gnd nc or no 0 v, 2.4 v 10 nf com off isolation = 20 log v com v no/ nc r l analyzer v+ v+ figure 5. channel off/on capacitance nc or no f = 1 mhz in com gnd 0 v, 2.4 v meter hp4192a impedance analyzer or equivalent 10 nf v+ v+
l c e e 1 e d e 1 a 2 a a 1 1 -a- b -b- 23 654 package information vishay siliconix document number: 71154 06-jul-01 www.vishay.com 1
dim min nom max min nom max a 0.90 ? 1.10 0.035 ? 0.043 a 1 ? ? 0.10 ? ? 0.004 a 2 0.80 ? 1.00 0.031 ? 0.039 b 0.15 ? 0.30 0.006 ? 0.012 c 0.10 ? 0.25 0.004 ? 0.010 d 1.80 2.00 2.20 0.071 0.079 0.087 e 1.80 2.10 2.40 0.071 0.083 0.094 e 1 1.15 1.25 1.35 0.045 0.049 0.053 e 0.65bsc 0.026bsc e 1 1.20 1.30 1.40 0.047 0.051 0.055 l 0.10 0.20 0.30 0.004 0.008 0.012 7 nom 7 nom ecn: s-03946?rev. b, 09-jul-01 dwg: 5550
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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